Advanced DMOS Technology
   These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Structure    devices are free from thermal runaway and thermally-induced secondary breakdown.

FEATUREs
□ Free from secondary breakdown
□ Low power drive requirement
□ Ease of paralleling
□ Low CISS and fast switching speeds
□ Excellent thermal stability
□ Integral Source-Drain diode
□ High input impedance and high gain
□ Complementary N- and P-channel devices

APPLICATIONs
□ Motor controls
□ Converters
□ Amplifiers
□ Switches
□ Power supply circuits
□ Driver (relays, hammers, solenoids, lamps, memories,
   displays, bipolar transistors, etc.)