2N6387(2002) Datasheet - ON Semiconductor
MFG CO.

ON Semiconductor
Plastic Medium-Power Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC
= 4.0 Adc
• Collector–Emitter Sustaining Voltage – @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6387
= 80 Vdc (Min) — 2N6388
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc — 2N6387, 2N6388
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
• TO–220AB Compact Package
Part Name
Description
View
MFG CO.
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
Mospec Semiconductor
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
Boca Semiconductor
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
Boca Semiconductor
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
New Jersey Semiconductor
Plastic Medium−Power Complementary Silicon Transistors ( Rev : 2006 )
ON Semiconductor
Plastic Medium-Power Complementary Silicon Transistors ( Rev : 2007 )
ON Semiconductor
Plastic Medium−Power Complementary Silicon Transistors ( Rev : 2005 )
ON Semiconductor
Plastic Medium-Power Silicon NPN Transistors ( Rev : 2013 )
ON Semiconductor
Plastic Medium-Power Complementary Silicon Transistors
ON Semiconductor
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
New Jersey Semiconductor