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2N6328 PDF
2N6328 Datasheet - Shenzhen SPTECH Microelectronics Co., Ltd.
MFG CO.

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type 2N6331
APPLICATIONS
• Designed for power amplifier and high-speed switching applications.
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor