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2N60L-T60-R Datasheet - Unisonic Technologies

2N60 image

Part Name
2N60L-T60-R

Other PDF
  2012  

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page
7 Pages

File Size
282.8 kB

MFG CO.
UTC
Unisonic Technologies 

DESCRIPTION
The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* RDS(ON) < 5Ω@ VGS = 10V, ID =1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

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