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2N6055 PDF
2N6055 Datasheet - Shenzhen SPTECH Microelectronics Co., Ltd.
MFG CO.

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Built-in Base-Emitter Shunt Resistors
• Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.0V(Max.)@IC= 4.0A
• Collector-Emitter Sustaining VoltageVCEO(SUS)= 60V(Min)
• Complement to type 2N6053
APPLICATIONS
• Designed for general purpose amplifier and low frequency switching applications.
Part Name
Description
View
MFG CO.
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlingtion Power Transistor
New Jersey Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor