. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain —
                 hFE = 2000 (Typ) @ IC = 2.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
                 VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc
                 (Min) — 2N6036, 2N6039
• Forward Biased Second Breakdown Current Capability
                  IS/b = 1.5 Adc @ 25 Vdc
• Monolithic Construction with Built–In Base–Emitter Resistors to
   Limit Leakage Multiplication
• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic
   Package