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2N60-C Datasheet - Unisonic Technologies

2N60-C image

Part Name
2N60-C

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page
7 Pages

File Size
262 kB

MFG CO.
UTC
Unisonic Technologies 

DESCRIPTION
   The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* RDS(ON) < 4.6 Ω @ VGS = 10V, ID =1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


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