2N5885 Datasheet - New Jersey Semiconductor
MFG CO.
New Jersey Semiconductor
... designed for general−purpose power amplifier and switching applications.
FEATUREs
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
• Low Leakage Current - ICEX = 1.0 mAdc (Max)
• Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc
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Description
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