Silicon NPN Power Transistors

. . . designed for medium–speed switching and amplifier applications. These devices feature:

• Total Switching Time at 3 A typically 1.15 µs
• Gain Ranges Specified at 1 A and 3 A
• Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A
• Excellent Safe Operating Areas
• Complement to 2N3791–92