Part Name
2N3418
Other PDF
PDF
page
3 Pages
File Size
47.6 kB
MFG CO.
Microsemi Corporation
2N3418(1998) Datasheet - Microsemi Corporation
Microsemi Corporation
DESCRIPTION:
These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
FEATURES:
• Meets MIL-S-19500/393
• Collector-Base Voltage: up to 85V
• Peak Collector Current: 5A
• High Power Dissipation in TO-5: 15W @ TC = 100°C
• Fast Switching
APPLICATIONS:
• Power Supply
• Pulse Amplifier
• High Frequency Power Switching
Part Name
Description
View
MFG CO.
Type 2N2857UB Geometry 0011 Polarity NPN Qual Level: JAN - JANS ( Rev : V2 )
Semicoa Semiconductor
Type 2N3019S Geometry 4500 Polarity NPN Qual Level: JAN - JANS ( Rev : V2 )
Semicoa Semiconductor
Type 2N2857 Geometry 0011 Polarity NPN Qual Level: JAN - JANS ( Rev : V2 )
Semicoa Semiconductor
Type 2N6988 Geometry 0600 Polarity PNP Qual Level: JAN - JANS ( Rev : V2 )
Semicoa Semiconductor
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
STMicroelectronics
Share Link: 