2N3232 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 18-55@ IC= 3A
• Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 3A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min)
APPLICATIONS
• Designed for general purpose power switch and amplifier applications.
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
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Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
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