2N2991 Datasheet - New Jersey Semiconductor
MFG CO.
New Jersey Semiconductor
HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS
• 15 Watts at 100°C Case Temperature
• Typ VCE,,at) of 0.2 V at 200mA
• Typ VBE of 0.8 V at 200 mA
• Typ fT of 50 MHz at 10 V, 100mA
Part Name
Description
View
MFG CO.
HIGH-FREQUENCY TRANSISTORS
New Jersey Semiconductor
SUBMINIATURE INTERMEDIATE HIGH TEMPERATURE POWER RELAY
HONGFA RELAY
SUBMINIATURE INTERMEDIATE POWER RELAY
Unspecified
SUBMINIATURE INTERMEDIATE POWER RELAY
Unspecified
SUBMINIATURE INTERMEDIATE POWER RELAY
Unspecified
SUBMINIATURE INTERMEDIATE POWER RELAY
HONGFA RELAY
Intermediate Acceptance High Sensitivity Phototransistor
Sharp Electronics
SUBMINIATURE INTERMEDIATE POWER RELAY
Cirrus Logic
MINIATURE INTERMEDIATE POWER RELAY
Unspecified
MINIATURE INTERMEDIATE POWER RELAY
Unspecified
