Part Name
240N10F7
Other PDF
no available.
PDF
page
13 Pages
File Size
621 kB
MFG CO.
STMicroelectronics
240N10F7 Datasheet - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Ultra low on-resistance
• 100% avalanche tested
APPLICATIONs
• High current switching applications
Part Name
Description
View
MFG CO.
Automotive N-channel 100 V, 4.2 mΩ typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package
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N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package
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N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages
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N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
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