Part Name
22NM60ND
Description
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PDF
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13 Pages
File Size
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MFG CO.
STMicroelectronics
22NM60ND Datasheet - STMicroelectronics
STMicroelectronics
Description
This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Designed for automotive applications and AEC-Q101 qualified
• Fast-recovery body diode
• Low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• High dv/dt ruggedness
APPLICATIONs
• Switching applications
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Part Name
Description
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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
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N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET in a D²PAK package
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Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-247 package
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Automotive-grade N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2013 )
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N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
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