1SS369 Datasheet - Toshiba
MFG CO.
Toshiba
Low Voltage High Speed Switching
● Small package
● Low forward voltage: VF (3) = 0.97V (typ.)
● Low reverse current: IR = 5µA (max)
Part Name
Description
View
MFG CO.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2014 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
