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1N6816R Datasheet - Microsemi Corporation

1N6816 image

Part Name
1N6816R

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2 Pages

File Size
59 kB

MFG CO.
Microsemi
Microsemi Corporation 

Features
• Tungsten schottky barrier
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6816) and reverse
   polarity (strap-to-cathode: 1N6816R)

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