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1N60P Datasheet - Gaomi Xinghe Electronics Co., Ltd.

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Part Name
1N60P

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3 Pages

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179.7 kB

MFG CO.
GXELECTRONICS
Gaomi Xinghe Electronics Co., Ltd. 

FEATURES
• Metal-on-silicon junction, majority carrier conduction
• High current capability, Low forward voltage drop
• Extremely low reverse current IR
• Ultra speed switching characteristics
• Small temperature coefficient of forward characteristics
• Satisfactory wave detection efficiency
• For use in recorder, TV ,radio and telephone as detectors
• Super high speed switching  cirits, small current rectifier
• High temperature soldering guaranteed:260℃/10 seconds at terminals
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

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