Part Name
1N60P
Description
Other PDF
no available.
PDF
page
3 Pages
File Size
179.7 kB
MFG CO.

Gaomi Xinghe Electronics Co., Ltd.
FEATURES
• Metal-on-silicon junction, majority carrier conduction
• High current capability, Low forward voltage drop
• Extremely low reverse current IR
• Ultra speed switching characteristics
• Small temperature coefficient of forward characteristics
• Satisfactory wave detection efficiency
• For use in recorder, TV ,radio and telephone as detectors
• Super high speed switching cirits, small current rectifier
• High temperature soldering guaranteed:260℃/10 seconds at terminals
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC