Part Name
1N5817W
Description
Other PDF
no available.
PDF
page
3 Pages
File Size
93 kB
MFG CO.
Xian Semipower Electronic Technology Co., Ltd.
1N5817W Datasheet - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
FEATURES
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Part Name
Description
View
MFG CO.
Schottky Barrier Rectifiers
( Rev : V2 )
Shenzhen Luguang Electronic Technology Co., Ltd
Share Link: 