Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages
STMicroelectronics
N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.073 Ω, 30 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
STMicroelectronics