Part Name
11NM65N
Other PDF
no available.
PDF
page
21 Pages
File Size
1.2 MB
MFG CO.
STMicroelectronics
11NM65N Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
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N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
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N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages ( Rev : 2022 )
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N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2015 )
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N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages ( Rev : 2020 )
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N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
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