Part Name
11N65M2
Description
Other PDF
no available.
PDF
page
27 Pages
File Size
714.6 kB
MFG CO.
STMicroelectronics
11N65M2(2019) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages
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N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages
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N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
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N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages
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N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages ( Rev : 2012 )
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N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages
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N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2 Power MOSFET in I²PAK and TO-220 packages
STMicroelectronics
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