Part Name
10NM60ND
Description
Other PDF
no available.
PDF
page
19 Pages
File Size
1.2 MB
MFG CO.
STMicroelectronics
10NM60ND Datasheet - STMicroelectronics
STMicroelectronics
Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt avalanche capabilities
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics
N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics
N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh™ II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2011 )
STMicroelectronics
Share Link: 