Part Name
10NM60N
Other PDF
PDF
page
17 Pages
File Size
865.9 kB
MFG CO.
STMicroelectronics
10NM60N Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
Switching applications
Part Name
Description
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MFG CO.
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N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics
N-channel 600 V - 0.37 Ω- 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET ( Rev : 2008 )
STMicroelectronics
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