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10N60Z-Q Datasheet - Unisonic Technologies

10N60Z-Q image

Part Name
10N60Z-Q

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page
6 Pages

File Size
188.6 kB

MFG CO.
UTC
Unisonic Technologies 

DESCRIPTION
The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* RDS(ON) < 0.8Ω@VGS =10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


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