06N03 Datasheet - PANJIT INTERNATIONAL
MFG CO.

PANJIT INTERNATIONAL
FEATURES
• RDS(ON), VGS@10V, IDS@30A=6mΩ
• RDS(ON), VGS@4.5V, IDS@30A=9mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment substance directive request
Part Name
Description
View
MFG CO.
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
25V N-Channel Enhancement Mode MOSFET
PANJIT INTERNATIONAL
N-Channel Enhancement-Mode MOSFET (25V, 40A)
Hi-Sincerity Mocroelectronics
N-Channel Enhancement-Mode MOSFET (25V, 45A)
Hi-Sincerity Mocroelectronics
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
25V N-Channel Enhancement Mode Field Effect Transistor
PANJIT INTERNATIONAL
N–Channel Enhancement–Mode MOSFET
Motorola => Freescale
N–CHANNEL ENHANCEMENT MODE MOSFET
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE MOSFET
Semelab - > TT Electronics plc
N-channel enhancement mode MOSFET
Panasonic Corporation