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2N5638 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
MFG CO.
2N5638
Fairchild
Fairchild Semiconductor 
2N5638 Datasheet PDF : 3 Pages
1 2 3
2N5638
N-Channel Switch
• This device is designed for low level analog switchng, sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 51.
1
TO-92
Absolute Maximum Ratings * TC=25°C unless otherwise noted
1. Drain 2. Source 3. Gate
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
30
V
VGS
Gate-Source Voltage
-30
V
IGF
Forward Gate Current
50
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
ID(off)
Drain Cutoff Leakage Current
On Characteristics
VDS = 0, IG = -10µA
VGS = -15V, VDS = 0
VDS = 12V, VGS = 15V
-30
V
-1.0 nA
1.0 nA
IDSS
Zero-Gate Voltage Drain Current *
rDS(on)
Drain-Source On Resistance
Small Signal Characteristics
VDS = 20V, IGS = 0
VGS = 0V, ID = 1.0mA
50
mA
30
rds(on)
Drain-Source On Resistance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = VGS = 0, f = 1.0kHz
VDS = 0, VGS = 12V, f = 1.0MHz
VDS = 0V, VGS = 12V, f = 1.0MHz
30
10 pF
4.0 pF
td(on)
Trun On Delay Time
tr
Rise Time
td(off)
Trun Off Delay Time
tf
Fall Time
* Pulse Test: Pulse Width 300µs, Duty Cycle 1.0%
VDD = 10V, VGS(on) = 0
VGS(off) = -12, ID(on) = 12mA
RG = 50
4.0 ns
5.0 ns
5.0 ns
10 ns
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

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