BF556A View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BF556A Datasheet PDF : 11 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF556A; BF556B; BF556C
102
handbook, halfpage
gis, bis
(mS)
10
1
10−1
10−2
10
MRC142
bis
gis
102
f (MHz)
103
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.16 Common-source input admittance; typical
values.
10
handbook, halfpage
gfs, −bfs
(mS)
1
MRC141
gfs
−bfs
10−1
10
102
f (MHz)
103
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.17 Common-source transfer admittance;
typical values.
−10
handbook, halfpage
brs, grs
(mS)
−1
−10−1
−10−2
−10−3
10
MRC144
brs
handbook,1h0alfpage
bos, gos
(mS)
1
grs
102
f (MHz)
103
10−1
10−2
10
MRC143
bos
gos
102
f (MHz)
103
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.18 Common-source reverse admittance;
typical values.
1996 Jul 29
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.19 Common-source output admittance;
typical values.
8
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