PMBFJ113 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
PMBFJ113 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ111;
PMBFJ112; PMBFJ113
FEATURES
• High-speed switching
• Interchangeability of drain and
source connections
• Low RDSon at zero gate voltage
( < 30 Ω for PMBFJ111).
DESCRIPTION
Symmetrical N-channel junction
FETs in a surface mount SOT23
envelope. Intended for use in
applications such as analog switches,
choppers, commutators, multiplexers
and thin and thick film hybrids.
handbook, halfpage
3
1
2
Top view
d
g
s
MAM385
Fig.1 Simplified outline and symbol.
PINNING - SOT23
PIN
DESCRIPTION
1
drain
2
source
3
gate
Note
1. Drain and source are
interchangeable.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
VGSO
VGDO
IG
drain-source voltage
gate-source voltage
drain-drain voltage
forward gate current
(DC)
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction
temperature
CONDITIONS MIN. MAX. UNIT
−
±40 V
−
−40 V
−
−40 V
−
50 mA
Tamb = 25 °C; −
note 1
300 mW
−65 150 °C
−
150 °C
April 1995
2
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