BFR30 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BFR30 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel field-effect transistors
Product specification
BFR30; BFR31
handbook, h6alfpage
ID
(mA)
4
MDA661
VGS = 0 V
−0.5
2
−1.0
−1.5
−2.0
0
25
50
75
100 Tj (°C) 125
BFR30.
VDS = 10 V.
Fig.7 Drain current as a function of junction
temperature; typical values.
handbook, h6alfpage
ID
(mA)
4
VGS =
0V
−0.2
2
−0.4
−0.6
−0.8
−1
0
−1.2
25
50
MDA662
75
100
125
Tj (°C)
BFR31.
VDS = 10 V.
Fig.8 Drain current as a function of junction
temperature; typical values.
10
handbook, halfpage
IGSS
(nA)
1
MDA656
10−1
10−2
10−3
0
50
100
150
200
Tj (°C)
handbook,−h6alfpage
VGS(off)
(V)
−4
MDA663
−2
BFR31
BFR30
0
0
2
4
6
8
10
IDSS (mA)
VGS = −10 V; VDS = 0.
Fig.9 Gate cut-off current as a function of junction
temperature; typical values.
ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 °C.
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
1997 Dec 05
6
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