BSN254A View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BSN254A Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode
vertical D-MOS transistor
handbIoDok1, .h6alfpage
(A) 1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
2
4
6
MGU570
8
10
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.6 Typical transfer characteristics.
Product specification
BSN254; BSN254A
20
handbook, halfpage
RDSon
(Ω)
15
(1)
(2)
MGU571
10
(3)
5
0
10−1
Tj = 25 °C.
(1) VGS = 2.5 V.
(2) VGS = 3 V.
(4)
(5)
(6)
1
10
ID (A)
(3) VGS = 3.5 V.
(4) VGS = 4 V.
(5) VGS = 5 V.
(6) VGS = 10 V.
Fig.7 Drain-source on-state resistance as a
function of drain current; typical values.
handbook2,5h0alfpage
C
(pF)
200
MGU572
150
100
Ciss
50
Coss
0
Crss
0
10
20
30
VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.8 Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
2002 Feb 19
5
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