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STP7NB60KD View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STP7NB60KD Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STGP7NB60KD/FP/STGB7NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol
Parameter
Test Conditions
tc
tr(Voff)
Cross-over Time
Off Voltage Rise Time
Vcc = 480 V, IC = 7 A,
RGE = 10 , VGE = 15 V
td(off)
Delay Time
tf
Fall Time
Eoff(**) Turn-off Switching Loss
Ets
Total Switching Loss
tc
tr(Voff)
td(off)
Cross-over Time
Off Voltage Rise Time
Delay Time
Vcc = 480 V, IC = 7 A,
RGE = 10 , VGE = 15 V
Tj = 125 °C
tf
Fall Time
Eoff(**) Turn-off Switching Loss
Ets
Total Switching Loss
Min. Typ. Max. Unit
85
ns
20
ns
75
ns
70
ns
85
µJ
235
µJ
150
ns
50
ns
110
ns
110
ns
220
µJ
405
µJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
If
Forward Current
Ifm
Forward Current pulsed
Vf
Forward On-Voltage
If = 6 A
If = 6 A, Tj = 125 °C
trr
Reverse Recovery Time
If = 6 A ,VR = 200 V,
Qrr
Reverse Recovery Charge Tj =125°C, di/dt = 100A/µs
Irrm
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Min.
Typ.
1.8
1.4
100
135
2.7
Max. Unit
6
A
48
A
2.2
V
V
ns
nC
A
3/9

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