STP20NE06LFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STP20NE06LFP Datasheet PDF : 9 Pages
| |||
STP20NE06L
®
STP20NE06LFP
N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP20NE06L
S TP20N E06LF P
VDSS
60 V
60 V
RDS( on )
< 0.07 Ω
< 0.07 Ω
s TYPICAL RDS(on) = 0.06 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
20 A
13 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM(•)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
V ISO
dv/dt
Insulation W ithstand Voltage (DC)
Peak Diode Recovery voltage slope
Ts tg Storage T emperature
Tj
Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
April 1999
Value
Unit
STP20NE06 ST P20NE06F P
60
V
60
V
± 20
V
20
13
A
14
9
A
80
80
A
70
0.47
30
W
0.2
W /o C
20 00
V
7
V/ns
-65 to 175
oC
175
oC
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
Share Link: 