IRF730 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
IRF730 Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
IRF730
(TCASE=25°C unless otherwise specified)
Table 4. On/off
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 250 µA, VGS = 0
400
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125 °C
1
µA
50 µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±20V
±100 nA
VGS(th)
t(s) RDS(on)
Gate threshold voltage
Static drain-source on
resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3 A
2
3
4
V
0.75 1
Ω
duc Table 5. Dynamic
ro Symbol
Parameter
Test conditions
te P gfs (1)
ole Ciss
bs Coss
O Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x RDS(on)max,
ID = 3 A
VDS = 25V, f = 1 MHz,
VGS = 0
) - td(on)
t(s tr
td(off)
uc tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD = 200V, ID = 3A
RG = 4.7Ω VGS = 10V
rod Qg
Total gate charge
Qgs Gate-source charge
P Qgd Gate-drain charge
VDD = 320V, ID =5.5A,
VGS = 10V
Obsolete1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
2.9
S
530
pF
90
pF
15
pF
ns
11
ns
15
ns
ns
18
24
nC
4
nC
8.5
nC
4/12
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