STGB3NB60SD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STGB3NB60SD

N-CHANNEL 3A - 600V D2PAK Power MESH™ IGBT

STMicroelectronics 

STGB3NB60SD

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbol

Parameter

Test Conditions

tc

tr(Voff)

td(Voff)

tf

Eoff(**)

Cross-Over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

VCC = 480 V

RGE = 1 kΩ

IC = 3 A

VGE = 15 V

tc

tr(Voff)

td(Voff)

tf

Eoff(**)

Cross-Over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

VCC = 480 V

RGE = 1 kΩ

Tj = 125 °C

IC = 3 A

VGE = 15 V

Min.

Typ.

1.8

1.0

3.4

0.72

1.15

2.8

1.45

3.6

1.2

1.8

Max.

Unit

µs

µs

µs

µs

mJ

µs

µs

µs

µs

mJ

COLLECTOR-EMITTER DIODE

Symbol

Parameter

Test Conditions

If

Forward Current

Ifm

Forward Current pulsed

Vf

Forward On-Voltage

If = 3 A

If = 1 A

trr

Reverse Recovery Time

If = 3 A

Qrr

Reverse Recovery Charge di/dt = 100 A/µs

Irrm

Reverse Recovery Current

(•)Pulse width limited by max. junction temperature

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(∗∗)Losses Include Also The Tail (Jedec Standardization)

VR = 200 V

Tj = 125 °C

Min.

Typ.

1.55

1.15

1700

4500

9.5

Max.

3

25

1.9

Unit

A

A

V

V

ns

nC

A

Thermal Impedance

3/8

Share Link: