NESG2046M33
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER
SYMBOL
TEST CONDITIONS
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
hFE Note 1
VCB = 5 V, IE = 0 mA
VEB = 0.5 V, IC = 0 mA
VCE = 1 V, IC = 2 mA
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
fT
|S21e|2
NF
Ga
Cre Note 2
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 1 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
MIN.
TYP. MAX. UNIT
−
−
100
nA
−
−
100
nA
140
180
220
−
15
18
11
13
−
GHz
−
dB
−
0.8
1.5
dB
9.5
11.5
−
dB
−
0.2
0.4
pF
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
T7
140 to 220