CMBT5401 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
MFG CO.
CMBT5401 Datasheet PDF : 3 Pages
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CMBT5401
Total power dissipation up to Tamb = 25°C
Junction temperature
Storage temperature
Ptot
max
250 mW
Tj
max.
150 ° C
Tstg
–55 to +150 ° C
THERMAL RESISTANCE
from junction to ambient
Rth j–a
500 K/W
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cut–off current
IE = 0; –VCB = 120 V
IE = 0; –VCB = 120 V; Tamb = 150 °C
Breakdown voltages
–ICBO
–ICBO
max.
max.
IC = 1 mA; IB = 0
IC = 100 µA; IE = 0
IC = 0; IE = 10 µA
Saturation voltages
–IC = 10 mA; –IB = 1 mA
–V(BR)CEO min.
–V(BR)CBO min.
–V(BR)EBO min.
–VCEsat
–VBEsat
max.
max.
–IC = 50 mA; –IB = 5 mA
–VCEsat
–VBEsat
max.
max.
D.C. current gain
IC = 1 mA; –VCE = 5 V
IC = 10 mA; –VCE = 5 V
hFE
min.
hFE
min.
max.
IC = 50 mA; –VCE = 5 V
Small–signal current gain
IC = 1 mA; –VCE = 10 V; f = 1 kHz
hFE
min.
hfe
min.
max.
Output capacitance at f = 1 MHz
IE = 0; –VCB = 10 V
Co
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 10 V; Tamb = 25 °C
fT
Noise figure at RS = 10 Ω
IC = 200 µA; –VCE = 5 V
f = 10 Hz to 15.7 kHz; Tamb = 25 °C
F
max.
min.
max.
max.
50 nA
50 µA
150 V
160 V
5V
0.2 V
1V
0.5 V
1V
50
60
240
50
40
200
6 pF
100 MHz
300 MHz
8 dB
Continental Device India Limited
Data Sheet
Page 2 of 3
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