2SD1740 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2SD1740 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1740
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector- Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC=1.5A; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB=6V; IC=0
hFE
DC Current Gain
IC= 1A; VCE= 4V
MIN TYP. MAX UNIT
150
V
100
V
6
V
1.5
V
2.0
V
1
mA
1
mA
700
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
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field. Please contact us if you intend our products to be used in these special applications.
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