BA82904YFVM-CE2 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

MFG CO.

BA82904YFVM-CE2

Automotive Excellent EMI Characteristics Ground Sense Operational Amplifiers

ROHM Semiconductor 

BA82904Yxxx-C BA82902Yxxx-C

Operational Notes – continued

11. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should

be avoided.

Resistor

Transistor (NPN)

Pin A

Pin A

Pin B

C

B

E

Pin B

P+

N

N

Parasitic

Elements

P

P+

N

N

P Substrate

GND

Parasitic

Elements

N P+

N P N P+ N

P Substrate

Parasitic

GND GND

Elements

Figure 57. Example of monolithic IC structure

B

N Region

close-by

C

E

Parasitic

Elements

GND

12. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

13. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all

within the Area of Safe Operation (ASO).

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TSZ02201-0GLG0G200040-1-2

20.Feb.2018 Rev.007

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