STB35N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STB35N65M5

N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

STMicroelectronics 

Electrical characteristics

STB/F/I/P/W35N65M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

AM05422v1

RDS(on)

(norm)

2.1

AM05423v1

1.9

1.00

1.7

1.5

0.90

1.3

1.1

0.80

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.9

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS vs temperature

VSD

(V)

TJ=-50°C

1.2

AM05424v1

BVDSS

(norm)

1.07

AM05416v1

1.0

0.8

0.6

TJ=150°C

0.4

TJ=25°C

0.2

0

0

10 20 30 40 50 ISD(A)

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0

25 50 75 100 125 TJ(°C)

Figure 18. Switching losses vs gate resistance

(1)

E

(μJ)

ID=15A

VGS=10V

400 VCL=400V

350

AM05421v1

Eon

300

Eoff

250

200

150

100

50

0

0

10

20

30

40

RG(Ω)

1. Eon including reverse recovery of a SiC diode

8/22

Doc ID 15325 Rev 3

Share Link: