STB35N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STB35N65M5

N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

STMicroelectronics 

STB/F/I/P/W35N65M5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220, D²PAK

TO-247, I²PAK

TO-220FP

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt (3)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 27 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS

±25

27

27 (1)

17

17 (1)

108

108 (1)

160

40

9

800

15

2500

- 55 to 150

150

Unit

V

A

A

A

W

A

mJ

V/ns

V

°C

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D²PAK TO-220FP I²PAK TO-220 TO-247

Rthj-case

Thermal resistance junction-

case max

Rthj-amb

Thermal resistance junction-

ambient max

Rthj-pcb

Thermal resistance junction-pcb

max

0.78

30

3.1

62.5

0.78

°C/W

50 °C/W

°C/W

Tl

Maximum lead temperature for

soldering purpose

300

°C

Doc ID 15325 Rev 3

3/22

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