8N65M5(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

8N65M5
(Rev.:2012)

N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages

STMicroelectronics 

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol

Parameter

TO-220

D²PAK

I²PAK

IPAK

DPAK,

Unit

TO-220FP

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt (3)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited by maximum junction temperature

2. Pulse width limited by safe operating area.

3. ISD ≤7 A, di/dt ≤400 A/µs, VDD ≤400 V, VDS(peak) < V(BR)DSS.

± 25

V

7

7 (1)

A

4.4

4.4 (1)

A

28

28 (1)

A

70

25

W

2

A

120

mJ

15

V/ns

2500

V

-55 to 150

°C

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK IPAK TO-220 I²PAK D²PAK TO-220FP

Rthj-case

Thermal resistance

junction-case max

Rthj-amb

Thermal resistance

junction-ambient max

Rthj-pcb(1)

Thermal resistance

junction-pcb max

1.79

100

62.5

50

5

°C/W

62.5 °C/W

30

°C/W

1. When mounted on 1 inch² FR-4 board, 2oz Cu.

Doc ID 16531 Rev 5

3/26

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