PN3568(1997) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
PN3568 Datasheet PDF : 2 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 30 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 40 V, IE = 0
VCB = 40 V, IE = 0, TA = 75 °C
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 1.0 V, IC = 30 mA
VCE = 1.0 V, IC = 150 mA
IC = 150 mA, IB = 15 mA
VCE = 1.0 V, IC = 150 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
Cib
Input Capacitance
hfe
Small-Signal Current Gain
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, f = 1.0 MHz
VEB = 0.5 V, f = 1.0 MHz
IC = 50 mA, VCE = 10 V,
f = 20 MHz
60
V
80
V
5.0
V
50
nA
5.0
µA
25
nA
40
40
120
0.25
V
1.1
V
20
pF
80
pF
3.0
30
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