4124D View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
4124D Datasheet PDF : 3 Pages
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4124D
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
VCES
350
V
VCEO
200
V
Emitter-Base Voltage
Continuous Collector Current
Base Current
Total Dissipation
DC
Pulse (Note 2)
DC
Pulse (Note 2)
TO-92
TO-126
VEBO
IC
ICP
IB
IBP
PC
7
V
2
A
4
A
1
A
2
A
1.5
W
20
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
TO-92
TO-126
ELECTRICAL CHARACTERISTICS
SYMBOL
θJC
RATINGS
80
6.25
UNIT
°C/W
°C/W
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)1
VCE(SAT)2
VBE(SAT)
hFE1
hFE2
fT
tS
tF
TEST CONDITIONS
IC=1mA, IB=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=350V, IE=0
VCE=200V, IB=0
VEB=7V, IC=0
IC=0.5A, IB=0.1A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A
IC=0.2A,VCE=5V
IC=2A,VCE=5V
IC=0.5A, VCE=10V
VCC=24V, IC=0.5A, IB1=-IB2=0.1A
MIN TYP MAX UNIT
350
V
200
V
7
V
100 µA
50 µA
10 μA
0.8 V
1.0 V
1.5 V
8
50
5
4
MHz
4 μs
0.7 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R204-031.B
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