3SK309 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
MFG CO.
3SK309 Datasheet PDF : 11 Pages
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Power Gain vs.
Drain to Source Voltage
25
5 mA
20
ID = 3 mA
15
10
5
VG2S = 0
f = 900 MHz
0
12 3 4 56
Drain to Source Voltage VDS (V)
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
VG1S is fixed
for ID = 5 mA
5
at VG2S = 0
VDS = 3 V
f = 900 MHz
0
–1 –0.8 –0.6 –0.4 –0.2 0
Gate2 to Source Voltage VG2S (V)
3SK309
Noise Figure vs.
Drain to Source Voltage
2.0
1.6
3 mA
1.2
ID = 5 mA
0.8
0.4
VG2S = 0
f = 900 MHz
0
12 3 4 56
Drain to Source Voltage VDS (V)
Gain Reduction vs.
Gate2 to Source Voltage
50
VG1S is fixed
40
for ID = 5 mA
at VG2S = 0
VDS = 3 V
30
f = 900 MHz
20
10
0
–1.5 –1.0 –0.5 0 0.5 1.0
Gate2 to Source Voltage VG2S (V)
5
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