NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
−103
VCEsat
(mV)
(1)
−102
(2)
(3)
mhc463
−10
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current;
typical values
8. Test information
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
Fig 6.
VI = 5 V; t = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = 1.9 V; VCC = −3 V
Oscilloscope: input impedance ZI = 50 Ω
Test circuit for switching times
mgd624
PMST3906_5
Product data sheet
Rev. 05 — 29 April 2009
© NXP B.V. 2009. All rights reserved.
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