IXFK72N20 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
IXFK72N20 Datasheet PDF : 4 Pages
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IXFK72N20
IXFK80N20
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VDS
= 10 V; ID = 0.5 • ID25, pulse test
35 42
S
5900
pF
VGS
= 0 V, VDS = 25 V, f = 1 MHz
1140
pF
480
pF
40
ns
VGS
= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
55
ns
RG = (External),
120
ns
26
ns
280
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
39
nC
120
nC
0.35 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I
V =0V
S
GS
72N20
80N20
72 A
80 A
ISM
Repetitive; pulse width limited by TJM 72N20
80N20
288 A
320 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5 V
trr
Q
RM
I
F
=
I,
S
-di/dt
=
100
A/ms,
V
R
=
100
V
IRM
200 ns
1.2
mC
10
A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c
0.53 0.83
D 25.91 26.16
E 19.81 19.96
e
5.46 BSC
J
0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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