BCW68G View Datasheet(PDF) - Nexperia B.V. All rights reserved
Part Name
Description
MFG CO.
BCW68G Datasheet PDF : 13 Pages
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Nexperia
Table 8.
300
(1)
hFE
200
(2)
100
(3)
006aaa119
0
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
VCE = -1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 3. BCW68F: DC current gain as a function of
collector current; typical values
800
006aaa121
hFE
600
(1)
BCW68 series
45 V, 800 mA PNP general-purpose transistor
600
hFE
(1)
400
006aaa120
(2)
200
(3)
0
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
VCE = -1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 4. BCW68G: DC current gain as a function of
collector current; typical values
- 10
006aaa122
VBEsat
(V)
400
(2)
200
(3)
-1
(1)
(2)
(3)
0
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
VCE = -1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 5. BCW68H: DC current gain as a function of
collector current; typical values
- 10- 1
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
IC/IB= 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 6. BCW68F: Base-emitter saturation voltage as a
function of collector current; typical values
BCW68X_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2017
© Nexperia B.V. 2017. All rights reserved.
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