MMDF4N01HD View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
MMDF4N01HD Datasheet PDF : 12 Pages
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MMDF4N01HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
−
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
IDSS
−
−
IGSS
−
VGS(th)
0.6
−
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
−
−
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
gFS
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
(See Figure 8)
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
QT
−
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
Reverse Recovery Time
trr
−
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
−
−
2.0
−
mV/°C
µAdc
−
1.0
−
10
−
100
nAdc
0.8
2.8
0.035
0.043
6.0
1.1
−
0.045
0.055
−
Vdc
mV/°C
Ohm
mhos
425
595
pF
270
378
115
230
13
26
ns
60
120
20
40
29
58
10
20
42
84
24
48
28
56
9.2
13
nC
1.3
−
3.5
−
3.0
−
Vdc
0.95
1.1
0.78
−
38
−
ns
17
−
22
−
0.028
−
µC
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