UPA843TC View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

MFG CO.

UPA843TC

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

NEC => Renesas Technology 

Noise Characteristics Q1

NOISE FIGURE vs.

COLLECTOR CURRENT

3.0

f = 2 GHz

2.5

VCE = 1 V

2V

2.0

3V

1.5

1.0

0.5

0.0

1

10

100

Collector Current IC (mA)

ASSOCIATED GAIN vs.

COLLECTOR CURRENT

16

f = 2 GHz

14

12

VCE = 3 V

2V

10

8

1V

6

4

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

µPA843TC

Q2

NOISE FIGURE vs.

COLLECTOR CURRENT

4.0

f = 2 GHz

3.5

VCE = 1 V

2V

3V

3.0

2.5

2.0

1.5

1.0

1

10

100

Collector Current IC (mA)

ASSOCIATED GAIN vs.

COLLECTOR CURRENT

11

f = 2 GHz

10

9

8

7

VCE = 3 V

2V

1V

6

5

4

3

1

10

100

Collector Current IC (mA)

6

Preliminary Data Sheet P14679EJ2V0DS00

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