D880 View Datasheet(PDF) - Elite Enterprises
Part Name
Description
MFG CO.
D880 Datasheet PDF : 1 Pages
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D880
NPN Epitaxial Silicon Transistor
LOW FREQUENCY POWER AMPLIFIER
Complement to B834
Collector-Emitter Voltage: VCEO=150V
Collector Dissipation: PC(max)=30W
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
60
V
60
V
7
V
3
A
30
W
150
oC
-55~+150 oC
TO-220
1. Base 2. Collector 3. Emitter
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
BVCEO
IEBO
ICBO
hFE(1)
hFE(2)
VCE(SAT)
VBE(ON)
fT
COB
tON
tSTG
tF
IC=50mA, IB=0
VEB=7V, IC=0
VCB=60V, IE=0
VCE=5V, IC=0.5A
VCE=5V, IC=3A
IC=3A, IB=0.3A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
VCC=30V, IC=1A
IB1=-IB2=0.2A
RL=30Ω
Min Typ Max Unit
60
V
100 μA
100 μA
60
300
20
0.4
1
V
0.7
1
V
3
MHz
70
pF
0.8
μs
1.5
μs
0.8
μs
hFE CLASSIFICATION
Classification
hFE1
O
60 – 120
Y
100 - 200
G
150 -300
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk
Part No.: D880
Page: 1 / 1
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